Samsung Electronics Company, a world leader in advanced semiconductor technology solutions, has a history of delivering the technology solutions to drive the latest hyper-scale datacenters and accelerate the growth of Artificial Intelligence (AI) and Machine Learning capability.
Through its latest invention of the latest in 7LPP technology and beyond with its EUV capability, Samsung has accomplished this feat again as they deliver a total platform solutions to greatly increase computing power and accelerate AI revolution.
The electronic company has unveiled a series of new silicon innovations at the heart of their future high-performance computing and connected devices. Samsung is focused on providing customers with the tools necessary to design and manufacture powerful, yet energy-efficient system-on-chips (SoC) for a wide range of applications.
“The trend toward a smarter, connected world has the industry demanding more from silicon providers,” said Charlie Bae, EVP and head, Foundry Sales & Marketing Team, Samsung Electronics. “To meet that demand, Samsung Foundry is powering innovation at the silicon level that will ultimately give people access to data, analysis and insight in new and previously unthought-of ways to make human lives better. It is imperative for us to accomplish the first-time silicon success for our customers’ next-generation chip designs.”
What is the technology comprised of? 7LPP, which is the first semiconductor process technology to use a EUV lithography solution, has been scheduled to be ready for production in the second half of this year. Through further innovation from the 7LPP process, the 5LPE update will allow greater area scaling and ultra-low power benefits.
Samsung’s use of highly mature and verified FinFET technology will be extended to the 4nm process. As the last generation of this technology, the 4nm process provides a smaller cell size, improved performance and faster ramp-up to the stable level of yield by adopting proven 5LPE, supporting easy migration.
The 3nm process nodes can adopt GAA, which will become the next-generation in device architecture. To overcome the physical scaling and performance limitations of the FinFET architecture, Samsung is developing its unique GAA technology. They have named this technology, Multi-Bridge Channel FET or MBCFET, for short. The technology uses a nano-sheet device. By enhancing the gate control, the performance of 3nm nodes will be significantly improved.
“Over the past year, we have focused on strengthening our EUV process portfolio to provide each of our customers with the finest technologies. Applying GAA structure to our next generation process node will enable us to take the lead in opening a new smart, connected world, while also to reinforcing our technology leadership,” said Bae.
Edited by
Ken Briodagh
